Semiconductor device

ABSTRACT

According to an embodiment, a semiconductor device includes a substrate, a connector, a volatile semiconductor memory element, multiple nonvolatile semiconductor memory elements, and a controller. A wiring pattern includes a signal line that is formed between the connector and the controller and that connects the connector to the controller. On the opposite side of the controller to the signal line, the multiple nonvolatile semiconductor memory elements are aligned along the longitudinal direction of the substrate.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. application Ser. No.14/328,552, filed Jul. 10, 2014, which is a continuation of U.S.application Ser. No. 13/954,254 filed Jul. 30, 2013, now U.S. Pat. No.8,817,513, which is a continuation of U.S. application Ser. No.13/731,599 filed Dec. 31, 2012, now U.S. Pat. No. 8,611,126, which is acontinuation of U.S. application Ser. No. 13/052,425 filed Mar. 21,2011, now U.S. Pat. No. 8,379,427, and is based upon and claims thebenefit of priority from the prior Japanese Patent Application No.2011-37344, filed on Feb. 23, 2011; the entire contents of each of whichare incorporated herein by reference.

FIELD

Embodiments disclosed herein relate generally to a semiconductor device.

BACKGROUND

Semiconductor devices generally have been used which have a nonvolatilesemiconductor memory element such as a NAND flash memory mounted on asubstrate with a connector formed therein. Also, the semiconductordevices further include a volatile semiconductor memory element and acontroller for controlling the nonvolatile semiconductor memory elementand the nonvolatile semiconductor memory element besides the nonvolatilesemiconductor memory element.

In these semiconductor devices, the shape and size of the substrate canbe restricted according to the use environment thereof, specifications,etc. Therefore, it is required to dispose the nonvolatile semiconductormemory element and so on according to the shape and size of thesubstrate and to suppress deterioration of the performancecharacteristic of the semiconductor devices.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram illustrating an example of a configuration ofa semiconductor device according to a first embodiment;

FIG. 2 is a plan view illustrating a schematic configuration of thesemiconductor device;

FIG. 3 is a plan view illustrating a detailed configuration of thesemiconductor device;

FIG. 4 is a perspective view illustrating a schematic configuration of aresistive element;

FIG. 5 is a view illustrating a circuit configuration in a front surfacelayer (first layer) of the substrate;

FIG. 6 is a view illustrating a circuit configuration in a rear surfacelayer (eighth layer) of the substrate;

FIG. 7 is a view illustrating a configuration of wiring lines connectinga drive control circuit to NAND memories, and is a conceptual view of alayer structure of the substrate;

FIG. 8 is a bottom view illustrating a schematic configuration of asemiconductor device according to a first modification of the firstembodiment;

FIG. 9 is a view illustrating a configuration of wiring lines connectinga drive control circuit to NAND memories, and is a conceptual view of alayer structure of the substrate;

FIG. 10 is a plan view illustrating a detailed configuration of asemiconductor device according to a second embodiment;

FIG. 11 is a cross-sectional view taken along line A-A of FIG. 10 in thedirection of an arrow;

FIG. 12 is a bottom view illustrating a schematic configuration of asemiconductor device according to a first modification of the secondembodiment;

FIG. 13 is a cross-sectional view taken along line B-B of FIG. 12 in thedirection of an arrow;

FIG. 14 is a plan view illustrating a schematic configuration of asemiconductor device according to a third embodiment;

FIG. 15 is a view illustrating a bottom surface of a NAND memory;

FIG. 16 is a bottom view illustrating a schematic configuration of asemiconductor device according to a first modification of the thirdembodiment;

FIG. 17 is a plan view illustrating a schematic configuration of asemiconductor device according to a fourth embodiment; and

FIG. 18 is a bottom view illustrating a schematic configuration of asemiconductor device according to a first modification of the fourthembodiment.

DETAILED DESCRIPTION

In general, according to an embodiment, a semiconductor device includesa substrate, a connector, a volatile semiconductor memory element,nonvolatile semiconductor memory elements, and a controller. Thesubstrate is a multi-layered structure with a wiring pattern formedtherein, and has an almost rectangular shape in a plan view. Theconnector is provided on a short side of the surface to be connectableto a host device. The volatile semiconductor memory element is providedon the front surface layer side of the substrate. The nonvolatilesemiconductor memory elements are provided on the front surface layerside of the substrate. The controller is provided on the front surfacelayer side of the substrate to control the volatile semiconductor memoryelement and the nonvolatile semiconductor memory element. The wiringpattern includes signal lines formed between the connector and thecontroller to connect the connector and the controller to each other. Onthe opposite side of the controller to the signal lines, multiplenonvolatile semiconductor memory elements are aligned along thelongitudinal direction of the substrate.

Exemplary embodiments of semiconductor devices will be explained belowin detail with reference to the accompanying drawings. The presentinvention is not limited to the following embodiments.

FIG. 1 is a block diagram illustrating an exemplary configuration of asemiconductor device according to a first embodiment. A semiconductordevice 100 is connected to a host device (hereinafter, abbreviated as ahost) 1 such as a personal computer or a CPU through a memory connectioninterface such as a SATA interface (ATA I/F) 2, and functions as anexternal memory of the host 1. Examples of the host 1 include a CPU of apersonal computer, a CPU of an imaging device such as a still camera anda video camera. Further, the semiconductor device 100 can perform datacommunication with a debugging device 200 through a communicationinterface 3 such as RS232C interface (RS232C I/F).

The semiconductor device 100 includes NAND-type flash memories(hereinafter, abbreviated as NAND memories) 10 serving as thenonvolatile semiconductor memory elements, a drive control circuit 4serving as the controller, a DRAM 20 which is a volatile semiconductormemory element capable of a higher-speed memory operation than the NANDmemories 10, a power supply circuit 5, an LED 6 for status display, anda temperature sensor 7 for detecting an internal temperature of a drive.The temperature sensor 7 directly or indirectly measures, for example,the temperature of the NAND memories 10. In a case where a resultmeasured by the temperature sensor 7 reaches or exceeds a predeterminedtemperature, the drive control circuit 4 restricts information writingand the like on the NAND memories 10 so as to suppress the temperaturefrom rising any further. Incidentally a non volatile semiconductormemory element, such as MRAM (Magneto resistive Random Access Memory)for example, may be used instead of the DRAM 20.

The power supply circuit 5 generates multiple different internal DCpower voltages from an external DC power supplied from a power supplycircuit on the host 1 side, and supplies the internal DC power voltagesto individual circuits in the semiconductor device 100. Further, thepower supply circuit 5 senses the rise of the external power, generatesa power-on/reset signal, and provides the power-on/reset signal to thedrive control circuit 4.

FIG. 2 is a plan view illustrating the schematic configuration of thesemiconductor device 100. FIG. 3 is a plan view illustrating thedetailed configuration of the semiconductor device 100. The power supplycircuit 5, the DRAM 20, the drive control circuit 4, and the NANDmemories 10 are mounted on the substrate 8 with the wiring patternformed therein. The substrate 8 has an almost rectangular shape in aplan view. On one short side of the substrate 8 having an almostrectangular shape, a connector 9 is provided to be connected to the host1. The connector 9 functions as the above-mentioned SATA interface 2 andthe communication interface 3. The connector 9 also functions as a powerinput unit supplying the power input from the host 1 to the power supplycircuit 5. The connector 9 is, for example, a LIF connector. Further,the connector 9 has a slit 9 a formed at a position deviating from thecenter of the substrate 8 in the widthwise direction of the substrate 8such that, for example, a protrusion (not illustrated) provided on thehost 1 side fits in the slit 9 a. Therefore, it is possible to preventthe semiconductor device 100 from being installed upside down.

The substrate 8 is a multi-layered structure formed by stackingsynthetic resins, for example, it is an 8-layer structure. However, thenumber of layers of the substrate 8 is not limited to 8. In thesubstrate 8, the wiring pattern is formed in various shapes on thesurface or in the inside of each layer made of a synthetic resin. Thewiring pattern formed in the substrate 8 electrically connects the powersupply circuit 5, the DRAM 20, the drive control circuit 4, and the NANDmemories 10 mounted on the substrate 8, to one another.

Next, the layout of the power supply circuit 5, the DRAM 20, the drivecontrol circuit 4, and the NAND memories 10 relative to the substrate 8will be described. As illustrated in FIG. 2 and FIG. 3, the power supplycircuit 5 and the DRAM 20 are disposed near the connector 9. Further,next to the power supply circuit 5 and the DRAM 20, the drive controlcircuit 4 is disposed. Furthermore, next to the drive control circuit 4,the NAND memories 10 are disposed. That is, along the longitudinaldirection of the substrate 8 from the connector 9 side, the DRAM 20, thedrive control circuit 4, and the NAND memories 10 are disposed in thisorder.

The multiple NAND memories 10 are mounted on the substrate 8, and themultiple NAND memories 10 are disposed side by side along thelongitudinal direction of the substrate 8. In the first embodiment, fourNAND memories 10 are disposed. However, as long as the number of NANDmemories 10 is plural, the number of mounted NAND memories 10 is notlimited thereto.

Further, among the four NAND memories 10, two NAND memories 10 may bedisposed on one long side of the substrate 8, and the other two NANDmemories 10 may be disposed on the other long side of the substrate 8.

Also, on the substrate 8, resistive elements 12 are mounted. Theresistive elements 12 are provided in the middle of the wiring pattern(wiring lines) connecting the drive control circuit 4 to the NANDmemories 10 and thus functions as resistors against signals input to andoutput from the NAND memories 10. FIG. 4 is a perspective viewillustrating the schematic configuration of the resistive element 12. Asillustrated in FIG. 4, the resistive element 12 is formed in such a formin which multiple resistive films 12 provided between electrodes 12 care collectively covered with a protective coat 12 b. Each NAND memory10 is provided with one resistive element 12. Further, each resistiveelement 12 is disposed near the corresponding NAND memory 10 connectedto the resistive element 12.

Next, the wiring pattern formed in the substrate 8 will be described. Asillustrated in FIG. 3, between the power supply circuit 5 and the drivecontrol circuit 4, there is a region S where nearly no electroniccomponents and the like are mounted. In the region S of the substrate 8,signal lines (SATA signal lines) to connect the connector 9 to the drivecontrol circuit 4 is formed as a portion of the wiring pattern. Asdescribed above, on the substrate 8, on the connector 9 side relative tothe drive control circuit 4, the SATA signal lines 14 are formed, and onthe opposite side of the drive control circuit 4 to the connector 9, theNAND memories 10 are disposed side by side in a line along thelongitudinal direction of the substrate 8.

FIG. 5 is a view illustrating the circuitry configuration on a frontsurface layer (first layer) L1 of the substrate 8. FIG. 6 is a viewillustrating the circuitry configuration on a rear surface layer (eighthlayer) L8 of the substrate 8. In the region S of the front surface layerL1 of the substrate 8, the SATA signal lines 14 are formed along the wayfrom the position where the drive control circuit 4 is disposed near theconnector 9. Further, the SATA signal lines further extend from therethrough the via-holes 15, which are formed to pass through the substrate8 in the vicinity of the connector 9. Then the SATA signal lines areconnected to SATA signal lines 14 formed on the rear surface layer L8 ofthe substrate 8, thereby finally reaching the connector 9. When it isnecessary to provide an electrode for the connector on the rear surfacelayer side of the substrate 8, it is required to form the SATA signallines 14 to extend through the substrate 8 up to the rear surface layerL8 as described above.

The most region of the rear surface layer L8 of the substrate 8, exceptfor the region provided with the SATA signal lines 14, is a ground 18.Further, although not illustrated, in inside layers between the frontsurface layer L1 and the rear surface layer L8 of the substrate 8, inportions overlapping the SATA signal lines 14, nearly no wiring patternsother than SATA signal lines 14 are formed. That is, in the portionoverlapping the region S in the substrate 8, no wiring patterns otherthan the SATA signal lines 14 are formed.

Further, the SATA signal lines 14 are partially broken on the frontsurface layer L1, but this is not especially problematic because signalsrunning through the SATA signal lines 14 are relayed by relay terminals16 (see FIG. 3) mounted on the corresponding portions, on the substrate8. Furthermore, the front surface of the substrate 8 is covered with aprotective coat (not illustrated) with an insulating property, such thatthe wiring pattern formed on the front surface layer L1 is surelyinsulated.

FIG. 7 is a view illustrating the configuration of wiring linesconnecting the drive control circuit 4 to the NAND memories 10, and isthe conceptual view of a layer structure of the substrate 8. In FIG. 7,in order to simplify the drawing, a portion of the layer structure ofthe substrate 8 is not illustrated.

As illustrated in FIG. 7, the wiring line to connect the drive controlcircuit 4 to the resistive element 12 is connected to the drive controlcircuit 4 on the front surface layer of the substrate 8 and extends upto the inside layers of the substrate 8 through via-holes 21. The wiringline runs around the inside layers, then extends further to the frontsurface layer through via-holes 22 again, and is connected to theresistive element 12.

Further, the wiring line to connect the resistive element 12 to the NANDmemory 10 is connected to the resistive element 12 on the front surfacelayer of the substrate 8, and then extends up to the inside layers ofthe substrate 8 through via-holes 23. The wiring line runs around theinside layers of the substrate 8, then extends further up to the frontsurface layer of the substrate 8 through via-holes 24, and is connectedto the NAND memory 10.

As described above, since the resistive element 12 is disposed near theNAND memory 10, the wiring line connecting the resistive element 12 tothe NAND memory 10 is shorter than the wiring line connecting the drivecontrol circuit 4 to the resistive element 12.

Here, since the semiconductor device 100 includes the multiple NANDmemories, multiple wiring lines are formed in the substrate 8 to connectthe resistive elements 12 to the NAND memories 10. Since the resistiveelements 12 are disposed near the corresponding NAND memories 10, avariation in length of multiple wiring lines connecting the resistiveelements 12 to the NAND memories 10 is suppressed.

The power supply circuit 5, the drive control circuit 4, the DRAM 20,the NAND memories 10, and the SATA signal lines 14 are disposed asdescribed above, whereby it is possible to appropriately dispose thoseelements on the substrate 8 having an almost rectangular shape in a planview.

Further, the power supply circuit 5 is disposed near the connector 9,bypassing the SATA signal lines 14. This makes it difficult for noisegenerated from the power supply circuit 5 to influence other elements orthe SATA signal lines 14, and improves the stability of the operation ofthe semiconductor device 100.

Furthermore, the DRAM 20 is disposed to bypass the SATA signal lines 14.This makes it difficult for noise generated from the DRAM 20 toinfluence other elements or the SATA signal lines 14, and improves thestability of the operation of the semiconductor device 100.

In general, it is preferable to dispose the DRAM 20 near the drivecontrol circuit 4. In the first embodiment, since the DRAM 20 isdisposed near the drive control circuit 4, it is possible to suppressdeterioration of the performance characteristic of the semiconductordevice 100.

Also, among the four NAND memories 10, two NAND memories 10 are disposedon one long side of the substrate 8, and the other two NAND memories 10are disposed on the other long side of the substrate 8. Thisconfiguration makes it possible to suppress the wiring pattern frombeing one-sided in the substrate 8 and to form the wiring pattern inbalance.

Further, since the resistive elements 12 are disposed near thecorresponding NAND memories 10, a variation in length of the multiplewiring lines connecting the resistive elements 12 to the NAND memories10 is suppressed and thus it is possible to suppress deterioration ofthe performance characteristic of the semiconductor device 100.

Furthermore, since the most region of the rear surface layer L8 of thesubstrate 8, except for the region provided with the SATA signal lines14, is a ground 18, in a case where a device of the host 1 exists on therear surface layer side of the semiconductor device 100 in a state inwhich the semiconductor device 100 is inserted into the host 1, it ispossible to suppress noise from the device from influencing eachelement, such as the wiring pattern and the NAND memories 10, of thesemiconductor device 100. Similarly, it is difficult that noise from thewiring line and each element of the semiconductor device 100 influencesthe device on the host 1 side.

As in the embodiment, in a case where it is necessary to provide anelectrode for a connector 9 on the rear surface layer side of thesubstrate 8, it is possible to shorten the SATA signal lines 14 formedon the rear surface layer L8 by passing the SATA signal lines 14 throughthe substrate 8 to the rear surface layer L8 at the position near theconnector 9. Therefore, in a case where a device on the host 1 exists onthe rear surface layer side of the semiconductor device 100, it isdifficult for noise from the device to influence the SATA signal lines14.

Also, in a portion overlapping the region S in the substrate 8, thewiring pattern except for the SATA signal lines 14 is rarely formed.Therefore, it is possible to easily manage impedance relative to theSATA signal lines 14.

Further, in the embodiment, the substrate 8 having the eight-layerstructure is given as an example. However, the present invention is notlimited thereto. The number of layers of the substrate 8 may be changed.

FIG. 8 is a bottom view illustrating the schematic configuration of asemiconductor device 100 according to a first modification of the firstembodiment. FIG. 9 is a view illustrating the configuration of wiringlines connecting a drive control circuit 4 to NAND memories 10, and is aconceptual view of a layer structure of the substrate 8. In FIG. 9, inorder to simplify the drawing, a portion of the layer structure of thesubstrate 8 is not illustrated.

In this first modification, even on the rear surface layer side of thesubstrate 8, NAND memories 10 are mounted, such that the semiconductordevice 100 includes eight NAND memories 10. The NAND memories 10 mountedon the rear surface layer side of the substrate 8 are disposed to besymmetrical to the NAND memories 10 mounted on the front surface layerside of the substrate 8.

The resistive elements 12 are not mounted on the rear surface layer sideof the substrate 8 but only on the front surface layer. Therefore,wiring lines to connect the resistive elements 12 to the NAND memories10 are formed to run around the inside layers of the substrate 8, aredivided by the via-holes 24, and are present not only on the frontsurface layer L1 of the substrate 8 but also on the rear surface layerL8. The wiring lines on the front surface layer L1 are connected to theNAND memories 10 mounted on the front surface layer side, and the wiringlines on the rear surface layer L8 are connected to the NAND memories 10mounted on the rear surface layer side. That is, two NAND memories 10are connected to one resistive element 12.

As described above, the NAND memories 10 are mounted on the bothsurfaces of the substrate 8, increasing the memory capacity of thesemiconductor device 100. Further, it is possible to connect multiple(two in the modification) NAND memories 10 to each resistive element 12by dividing the wiring line in the middle of it, and thus thesemiconductor device 100 can include NAND memories 10 which are morethan, in number, channels which the drive control circuit 4 has. In thismodification, the drive control circuit 4 has four channels. In thiscase, eight NAND memories 10 can be incorporated. Further, each of twoNAND memories 10 connected to one wiring line determines which of themoperates, on the basis of whether a channel enable (CE) signal of thecorresponding NAND memory is active or not.

FIG. 10 is a plan view illustrating a detailed configuration of asemiconductor device according to a second embodiment. FIG. 11 is across-sectional view taken along line A-A of FIG. 10 in the direction ofan arrow. The same components as in the above-mentioned embodiment aredenoted by same reference symbols and the detailed description thereofis not repeated.

In the second embodiment, a semiconductor device 102 has four NANDmemories 10 all of which are disposed side by side on one long side of asubstrate 8, more specifically, on a long side where a power supplycircuit 5 is provided. Since all of the NAND memories 10 arecollectively disposed on one long side, in an empty space on the otherlong side, resistive elements 12 may be collectively disposed.

In general, it is often the case that the NAND memories 10 areconfigured to be higher than the other elements mounted on the substrate8. For this reason, of a region T along the other long side of thesubstrate 8, in a portion where the resistive elements 12 arecollectively disposed, as illustrated in FIG. 11, it is possible tosuppress the height of the semiconductor device 102 to be lower than aregion U where the NAND memories 10 are disposed.

Therefore, in a case where a partial region of the semiconductor device102 should be lower than the other region according to a demand such asthe specifications, etc., the NAND memories 10 may be disposed to bypassthe corresponding region, thereby obtaining the semiconductor device 102satisfying the demand. In the embodiment, the case where the regionalong the other long side of the substrate 8 should be lower than theother region is given an example. Further, a DRAM 20 and a temperaturesensor 7 are also disposed in the region T. However, since it is oftenthat the DRAM 20 and the temperature sensor 7 are configured to be lowerthan the NAND memories 10, it is possible to suppress the height of thesemiconductor device 102 in the entire region T to be lower than theregion U.

FIG. 12 is a bottom view illustrating a schematic configuration of asemiconductor device 102 according to a first modification of the secondembodiment. In the first modification, similarly to the firstmodification of the first embodiment, NAND memories 10 are disposed onthe rear surface layer side of the substrate 8 to be symmetric to theNAND memories 10 disposed on the front surface layer side. Therefore, itis possible to increase the memory capability of the semiconductordevice 102.

Further, since the NAND memories 10 are disposed to be symmetric to theNAND memories 10 disposed on the front surface layer side of thesubstrate 8, even on the rear surface layer side of the substrate 8, theNAND memories 10 are disposed on one long side. Therefore, it ispossible to suppress the height of the semiconductor device 102 in theregion T to be low.

Furthermore, a configuration in which the resistive elements 12 aredisposed only on the front surface layer side of the substrate 8 and twoNAND memories 10 are connected to one resistive element 12, and aneffect thereof are the same as those described in the first modificationof the first embodiment.

FIG. 14 is a plan view illustrating a schematic configuration of asemiconductor device according to a third embodiment. The samecomponents as the above-mentioned embodiments are denoted by identicalreference symbols and a detailed description thereof is omitted. In theembodiment, on a connector 9 side relative to a drive control circuit 4,two NAND memories 10 are disposed, and on the opposite side, two NANDmemories 10 are further disposed. That is, along the longitudinaldirection of the substrate 8, multiple NAND memories 10 are disposedwith the drive control circuit 4 interposed therebetween.

The NAND memories 10 are separately disposed as described above, andthus it is possible to suppress a deviation in length among wiring linesconnecting the NAND memories 10 and the drive control circuit 4, ascompared to a case where four NAND memories 10 are disposed side by sideon one side of the drive control circuit 4. For example, in theembodiment, it is possible to suppress the ratio of the shortest wiringline to the longest wiring line among the wiring lines connecting theNAND memories 10 to the drive control circuit 4 to about 1:2. Meanwhile,similarly, in a case where four NAND memories 10 are disposed side byside on one side of the drive control circuit 4, the ratio of theshortest wiring line to the longest wiring line is about 1:4.

As described above, in the embodiment, the deviation in length among thewiring lines is suppressed, and thus it is possible to reduce adifference in optimal driver setting for the NAND memories 10.Therefore, it is possible to suppress error generation of data and tostabilize the operation of the semiconductor device 103.

The NAND memories 10 provided on the connector 9 side relative to thedrive control circuit 4 are mounted on SATA signal lines 14. In theembodiment, since ball grid array (BGA) type NAND memories are used asthe NAND memories 10, in a case of forming the SATA signal lines 14 onthe front surface layer L1, it is necessary to bypass ball-shapedelectrodes (bumps) formed on the NAND memories 10.

However, as illustrated in FIG. 15, since a lot of ball-shapedelectrodes 25 are provided on the bottom surfaces of the NAND memories10, it is difficult to form the SATA signal lines 14 to bypass theball-shaped electrodes 25. For this reason, in the invention, the SATAsignal lines 14 to connect the connector 9 and the drive control circuit4 are formed in the inside layers of the substrate 8.

Also, since the NAND memories 10 are disposed on one long side of thesubstrate 8, it is possible to suppress the height of the semiconductordevice 103 in a region along the other long side. Further, the resistiveelements 12 are disposed in the vicinities of the NAND memories 10 andthus it is possible to suppress deterioration of the performancecharacteristic of the semiconductor device 103. Furthermore, the numberof the NAND memories 10 which the semiconductor device 103 has is notlimited to four, but may be two or more.

FIG. 16 is a bottom view illustrating a schematic configuration of asemiconductor device according to a first modification of the thirdembodiment. In the first modification, similarly to the firstmodification of the first embodiment, NAND memories 10 are disposed onthe rear surface layer side of the substrate 8 to be symmetric to theNAND memories 10 disposed on the front surface layer side. Therefore, itis possible to increase the memory capability of the semiconductordevice 103.

Further, since the NAND memories 10 are disposed to be symmetric to theNAND memories 10 disposed on the front surface layer side of thesubstrate 8, even on the rear surface layer side of the substrate 8, theNAND memories 10 are disposed on one long side. Therefore, it ispossible to suppress the height of the semiconductor device 102 in aregion along the other long side to be low.

Furthermore, a configuration in which the resistive elements 12 aredisposed only on the front surface layer side of the substrate 8 and twoNAND memories 10 are connected to one resistive element 12, and aneffect thereof are the same as those described in the first modificationof the first embodiment.

FIG. 17 is a plan view illustrating a schematic configuration of asemiconductor device according to a fourth embodiment. The samecomponents as the above-mentioned embodiments are denoted by identicalreference symbols and a detailed description thereof is omitted. In theembodiment, on a connector 9 side relative to a drive control circuit 4,one NAND memory 10 is disposed, and on the opposite side, one NANDmemory 10 is further disposed. That is, a semiconductor device 104 hastwo NAND memories 10.

In a case of disposing two NAND memories 10 with the drive controlcircuit 4 interposed therebetween as the embodiment, it is possible tomake the lengths of multiple wiring lines connecting the drive controlcircuit 4 and the NAND memories 10 substantially the same. Meanwhile,similarly, in a case of disposing two NAND memories 10 side by side onone side of the drive control circuit 4, the ratio of the shortestwiring line to the longest wiring line is about 1:2.

As described above, in the invention, the lengths of the multiple wiringlines are made substantially the same, and thus it is also possible tomake optical driver setting for the NAND memories 10 substantially thesame. Therefore, it is possible to suppress error generation of data andto stabilize the operation of the semiconductor device 104.

Also, similarly to the third embodiment, the SATA signal lines 14 areformed in the inside layers of the substrate 8. Further, since the NANDmemories 10 are disposed on one long side of the substrate 8, it ispossible to suppress the height of the semiconductor device 104 in aregion along the other long side to be low. Furthermore, the resistiveelements 12 are disposed in the vicinities of the NAND memories 10 andthus it is possible to suppress deterioration of the performancecharacteristic of the semiconductor device 104.

FIG. 18 is a bottom view illustrating a schematic configuration of thesemiconductor device according to a first modification of the fourthembodiment. In the first modification, similarly to the firstmodification of the first embodiment, NAND memories 10 are disposed onthe rear surface layer side of the substrate 8 to be symmetric to theNAND memories 10 disposed on the front surface layer side. Therefore, itis possible to increase the memory capability of the semiconductordevice 104.

Further, since the NAND memories 10 are disposed to be symmetric to theNAND memories 10 disposed on the front surface layer side of thesubstrate 8, even on the rear surface layer side of the substrate 8, theNAND memories 10 are disposed on one long side. Therefore, it ispossible to suppress the height of the semiconductor device 104 in aregion along the other long side to be low.

Furthermore, a configuration in which the resistive elements 12 aredisposed only on the front surface layer side of the substrate 8 and twoNAND memories 10 are connected to one resistive element 12, and aneffect thereof are the same as those described in the first modificationof the first embodiment.

While certain embodiments have been described, these embodiments havebeen presented by way of example only, and are not intended to limit thescope of the inventions. Indeed, the novel devices described herein maybe embodied in a variety of other forms; furthermore, various omissions,substitutions and changes in the form of the devices described hereinmay be made without departing from the sprit of the inventions. Theaccompanying claims and their equivalents are intended to cover suchforms or modifications as would fall within the scope and spirit of theinventions.

What is claimed is:
 1. A semiconductor device comprising: first to n-th (n is an integer of 2 or more) nonvolatile semiconductor memories; (n+1)-th to 2n-th nonvolatile semiconductor memories; first to n-th resistive elements; a controller configured to control the first to 2n-th nonvolatile semiconductor memories; first to n-th signal lines respectively connecting the controller and the first to n-th resistive elements; (n+1)-th to 2n-th signal lines respectively connecting the first to n-th resistive elements and the first to n-th nonvolatile semiconductor memories; (2n+1)-th to 3n-th signal lines divided from the (n+1)-th to 2n-th signal lines, and respectively connected with the (n+1)-th to 2n-th nonvolatile semiconductor memories; and a substrate, wherein the substrate includes a front surface layer including a wiring pattern formed on a front surface of the substrate, and on which the first to n-th nonvolatile semiconductor memories, the first to n-th resistive elements, and the controller are mounted, a rear surface layer including a wiring pattern formed on a rear surface of the substrate, and on which the (n+1)-th to 2n-th nonvolatile semiconductor memories are mounted, and a connector configured to be connected with an external device, and the first to n-th nonvolatile semiconductor memories and the (n+1)-th to 2n-th nonvolatile semiconductor memories are symmetrically disposed with respect to the substrate.
 2. The semiconductor device according to claim 1, wherein n is
 4. 3. The semiconductor device according to claim 2, further comprising: a temperature sensor mounted on the front surface layer.
 4. The semiconductor device according to claim 2, further comprising: an internal wiring layer provided between the front surface layer and the rear surface layer, and including a wiring pattern, wherein each of the (2n+1)-th to 3n-th signal lines includes a portion passing through the internal wiring layer.
 5. The semiconductor device according to claim 2, wherein the k-th (k is an integer that satisfies 1≦k≦2n) nonvolatile semiconductor memory determines whether to operate in response to a signal from the (n+k)-th signal line, on a basis of a channel enable signal of the k-th nonvolatile semiconductor memory.
 6. The semiconductor device according to claim 2, wherein two nonvolatile semiconductor memories symmetrically disposed with respect to the substrate, of the first to 2n-th nonvolatile semiconductor memories, are configured to be individually operable, on a basis of whether respective channel enable signals of these two nonvolatile semiconductor memories are active or not.
 7. The semiconductor device according to claim 2, wherein the substrate includes a long side and a short side perpendicular to the long side in plan view, the connector is provided on the short side of the substrate, and the first to n-th nonvolatile semiconductor memories are provided on the opposite side to the connector as viewed from a position of the controller in plan view.
 8. The semiconductor device according to claim 7, further comprising: a volatile semiconductor memory provided on the same side as the connector as viewed from the first to n-th nonvolatile semiconductor memories in plan view.
 9. The semiconductor device according to claim 1, wherein the substrate includes a long side and a short side perpendicular to the long side in plan view, the connector is provided on the short side of the substrate, and the first to n-th nonvolatile semiconductor memories are provided on the opposite side to the connector as viewed from a position of the controller in plan view.
 10. The semiconductor device according to claim 9, further comprising: a volatile semiconductor memory provided on the same side as the connector as viewed from the first to n-th nonvolatile semiconductor memories in plan view.
 11. The semiconductor device according to claim 9, further comprising: an internal wiring layer provided between the front surface layer and the rear surface layer, and including a wiring pattern, wherein each of the (2n+1)-th to 3n-th signal lines includes a portion passing through the internal wiring layer.
 12. The semiconductor device according to claim 9, wherein the k-th (k is an integer that satisfies 1 ≦k≦2n) nonvolatile semiconductor memory determines whether to operate in response to a signal from the (n +k)-th signal line, on a basis of a channel enable signal of the k-th nonvolatile semiconductor memory.
 13. The semiconductor device according to claim 9, wherein two nonvolatile semiconductor memories symmetrically disposed with respect to the substrate, of the first to 2n-th nonvolatile semiconductor memories, are configured to be individually operable, on a basis of whether respective channel enable signals of these two nonvolatile semiconductor memories are active or not.
 14. The semiconductor device according to claim 9, wherein the n is an even number, and first to n/2-th nonvolatile semiconductor memories, of the first to n-th nonvolatile semiconductor memories, are disposed on one long side of the substrate, and (n/2+1)-th to n-th nonvolatile semiconductor memories are disposed on the other long side of the substrate.
 15. The semiconductor device according to claim 14, comprising: wiring lines respectively connecting the first to n-th nonvolatile semiconductor memories, and the controller, wherein a ratio of the shortest wiring line to the longest wiring line is approximately 1:2.
 16. The semiconductor device according to claim 1, further comprising: a temperature sensor mounted on the front surface layer.
 17. The semiconductor device according to claim 1, further comprising: an internal wiring layer provided between the front surface layer and the rear surface layer, and including a wiring pattern, wherein each of the (2n+1)-th to 3n-th signal lines includes a portion passing through the internal wiring layer.
 18. The semiconductor device according to claim 1, wherein the k-th (k is an integer that satisfies 1≦k≦2n) nonvolatile semiconductor memory determines whether to operate in response to a signal from the (n+k)-th signal line, on a basis of a channel enable signal of the k-th nonvolatile semiconductor memory.
 19. The semiconductor device according to claim 1, wherein two nonvolatile semiconductor memories symmetrically disposed with respect to the substrate, of the first to 2n-th nonvolatile semiconductor memories, are configured to be individually operable, on a basis of whether respective channel enable signals of these two nonvolatile semiconductor memories are active or not.
 20. The semiconductor device according to claim 1, wherein the nonvolatile semiconductor memories are NAND flash memories. 